SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Framleiðanda Part Number

SI7900AEDN-T1-GE3

Innri Part Number

ABC-SI7900AEDN-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET 2N-CH 20V 6A PPAK 1212-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1174040 Pieces

Tilvísun verð

~~USD 0.2788~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SI7900AEDN-T1-GE3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir SI7900AEDN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI7900AEDN-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET 2N-CH 20V 6A PPAK 1212-8

Series : TrenchFET®

Hluti staða : Active

FET gerð : 2 N-Channel (Dual) Common Drain

FET lögun : Logic Level Gate

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ kt : 900mV @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 16nC @ 4.5V

Inntaksrýmd (Ciss) (Max) @ Vds : -

Afl - Max : 1.5W

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Pakki / mál : PowerPAK® 1212-8 Dual

Birgir tæki pakki : PowerPAK® 1212-8 Dual

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI790 , SI7900AE

skjöl fyrir SI7900AEDN-T1-GE3

datasheets : SI7900AEDN-T1-GE3.pdf

Tengdar vörur fyrir SI7900AEDN-T1-GE3 Vishay Siliconix

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