SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Framleiðanda Part Number

SCTH90N65G2V-7

Innri Part Number

ABC-SCTH90N65G2V-7

framleiðanda

STMicroelectronics

Stutt lýsing

SILICON CARBIDE POWER MOSFET 650

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

63456 Pieces

Tilvísun verð

~~USD 23.5705~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SCTH90N65G2V-7 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir SCTH90N65G2V-7

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SCTH90N65G2V-7

framleiðanda : STMicroelectronics

Lýsing : SILICON CARBIDE POWER MOSFET 650

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : SiCFET (Silicon Carbide)

Afrennsli að uppspennu (Vdss) : 650V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 90A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 26 mOhm @ 50A, 18V

Vgs (th) (Max) @ kt : 5V @ 1mA

Hliðargjald (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (hámark) : +22V, -10V

Inntaksrýmd (Ciss) (Max) @ Vds : 3300pF @ 400V

FET lögun : -

Dreifing orku (Max) : 330W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : H2PAK-7

Pakki / mál : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SCTH , SCTH90N

skjöl fyrir SCTH90N65G2V-7

datasheets : SCTH90N65G2V-7.pdf

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