SIHD6N80E-GE3 - MOSFET N-CHAN 800V TO-252

Framleiðanda Part Number

SIHD6N80E-GE3

Innri Part Number

ABC-SIHD6N80E-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CHAN 800V TO-252

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

279755 Pieces

Tilvísun verð

~~USD 1.17~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SIHD6N80E-GE3 á lager að selja.

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forskriftir fyrir SIHD6N80E-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIHD6N80E-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CHAN 800V TO-252

Series : E

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 800V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 5.4A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 940 mOhm @ 3A, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 44nC @ 10V

Vgs (hámark) : ±30V

Inntaksrýmd (Ciss) (Max) @ Vds : 827pF @ 100V

FET lögun : -

Dreifing orku (Max) : 78W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : D-PAK (TO-252AA)

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIHD , SIHD6N

skjöl fyrir SIHD6N80E-GE3

datasheets : SIHD6N80E-GE3.pdf

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