SISH410DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Framleiðanda Part Number

SISH410DN-T1-GE3

Innri Part Number

ABC-SISH410DN-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CHAN PPAK 1212-8SH

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1283520 Pieces

Tilvísun verð

~~USD 0.25502~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SISH410DN-T1-GE3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir SISH410DN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SISH410DN-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CHAN PPAK 1212-8SH

Series : TrenchFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 22A (Ta), 35A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ kt : 2.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 1600pF @ 10V

FET lögun : -

Dreifing orku (Max) : 3.8W (Ta), 52W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® 1212-8SH

Pakki / mál : PowerPAK® 1212-8SH

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SISH4 , SISH410D

skjöl fyrir SISH410DN-T1-GE3

datasheets : SISH410DN-T1-GE3.pdf

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