BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON

Framleiðanda Part Number

BSG0810NDIATMA1

Innri Part Number

ABC-BSG0810NDIATMA1

framleiðanda

Infineon Technologies

Stutt lýsing

MOSFET 2N-CH 25V 19A/39A 8TISON

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

583912 Pieces

Tilvísun verð

~~USD 0.56056~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með BSG0810NDIATMA1 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir BSG0810NDIATMA1

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSG0810NDIATMA1

framleiðanda : Infineon Technologies

Lýsing : MOSFET 2N-CH 25V 19A/39A 8TISON

Series : OptiMOS™

Hluti staða : Active

FET gerð : 2 N-Channel (Dual) Asymmetrical

FET lögun : Logic Level Gate, 4.5V Drive

Afrennsli að uppspennu (Vdss) : 25V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 19A, 39A

Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V

Vgs (th) (Max) @ kt : 2V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 8.4nC @ 4.5V

Inntaksrýmd (Ciss) (Max) @ Vds : 1040pF @ 12V

Afl - Max : 2.5W

Vinnuhitastig : -55°C ~ 155°C (TJ)

Festingargerð : Surface Mount

Pakki / mál : 8-PowerTDFN

Birgir tæki pakki : PG-TISON-8

þyngd : -

ástand : Nýtt og frumlegt

Tengt : BSG08 , BSG0810

skjöl fyrir BSG0810NDIATMA1

datasheets : BSG0810NDIATMA1.pdf

Tengdar vörur fyrir BSG0810NDIATMA1 Infineon Technologies

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