PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Framleiðanda Part Number

PHD18NQ10T,118

Innri Part Number

ABC-PHD18NQ10T,118

framleiðanda

NXP USA Inc.

Stutt lýsing

MOSFET N-CH 100V 18A DPAK

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

45721 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með PHD18NQ10T,118 á lager að selja.

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forskriftir fyrir PHD18NQ10T,118

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : PHD18NQ10T,118

framleiðanda : NXP USA Inc.

Lýsing : MOSFET N-CH 100V 18A DPAK

Series : TrenchMOS™

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 18A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 9A, 10V

Vgs (th) (Max) @ kt : 4V @ 1mA

Hliðargjald (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 633pF @ 25V

FET lögun : -

Dreifing orku (Max) : 79W (Tc)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : DPAK

Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

þyngd : -

ástand : Nýtt og frumlegt

Tengt : PHD1 , PHD18NQ

skjöl fyrir PHD18NQ10T,118

datasheets : PHD18NQ10T,118.pdf

Tengdar vörur fyrir PHD18NQ10T,118 NXP USA Inc.

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