SI5513DC-T1-GE3 - MOSFET N/P-CH 20V 3.1A 1206-8

Framleiðanda Part Number

SI5513DC-T1-GE3

Innri Part Number

ABC-SI5513DC-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N/P-CH 20V 3.1A 1206-8

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

54041 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SI5513DC-T1-GE3 á lager að selja.

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forskriftir fyrir SI5513DC-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI5513DC-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N/P-CH 20V 3.1A 1206-8

Series : TrenchFET®

Hluti staða : Obsolete

FET gerð : N and P-Channel

FET lögun : Logic Level Gate

Afrennsli að uppspennu (Vdss) : 20V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3.1A, 2.1A

Rds On (Max) @ Id, Vgs : 75 mOhm @ 3.1A, 4.5V

Vgs (th) (Max) @ kt : 1.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 6nC @ 4.5V

Inntaksrýmd (Ciss) (Max) @ Vds : -

Afl - Max : 1.1W

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Pakki / mál : 8-SMD, Flat Lead

Birgir tæki pakki : 1206-8 ChipFET™

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI551 , SI5513D

skjöl fyrir SI5513DC-T1-GE3

datasheets : SI5513DC-T1-GE3.pdf

Tengdar vörur fyrir SI5513DC-T1-GE3 Vishay Siliconix

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