SIDR626DP-T1-GE3 - MOSFET N-CHAN 60V

Framleiðanda Part Number

SIDR626DP-T1-GE3

Innri Part Number

ABC-SIDR626DP-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CHAN 60V

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

480207 Pieces

Tilvísun verð

~~USD 0.681615~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SIDR626DP-T1-GE3 á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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forskriftir fyrir SIDR626DP-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIDR626DP-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CHAN 60V

Series : TrenchFET® Gen IV

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 60V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 42.8A (Ta), 100A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 20A, 10V

Vgs (th) (Max) @ kt : 3.4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 102nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 5130pF @ 30V

FET lögun : -

Dreifing orku (Max) : 6.25W (Ta), 125W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® SO-8DC

Pakki / mál : PowerPAK® SO-8

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIDR6 , SIDR626D

skjöl fyrir SIDR626DP-T1-GE3

datasheets : SIDR626DP-T1-GE3.pdf

Tengdar vörur fyrir SIDR626DP-T1-GE3 Vishay Siliconix

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