NP109N055PUJ-E1B-AY - MOSFET N-CH 55V MP-25ZP/TO-263

Framleiðanda Part Number

NP109N055PUJ-E1B-AY

Innri Part Number

ABC-NP109N055PUJ-E1B-AY

framleiðanda

Renesas Electronics America

Stutt lýsing

MOSFET N-CH 55V MP-25ZP/TO-263

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

50368 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með NP109N055PUJ-E1B-AY á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir NP109N055PUJ-E1B-AY

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NP109N055PUJ-E1B-AY

framleiðanda : Renesas Electronics America

Lýsing : MOSFET N-CH 55V MP-25ZP/TO-263

Series : -

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 55V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 110A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 55A, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 10350pF @ 25V

FET lögun : -

Dreifing orku (Max) : 1.8W (Ta), 220W (Tc)

Vinnuhitastig : 175°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : TO-263

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : NP109N , NP109N055

skjöl fyrir NP109N055PUJ-E1B-AY

datasheets : NP109N055PUJ-E1B-AY.pdf

Tengdar vörur fyrir NP109N055PUJ-E1B-AY Renesas Electronics America

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