EPC2012 - GANFET TRANS 200V 3A BUMPED DIE

Framleiðanda Part Number

EPC2012

Innri Part Number

ABC-EPC2012

framleiðanda

EPC

Stutt lýsing

GANFET TRANS 200V 3A BUMPED DIE

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

40288 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með EPC2012 á lager að selja.

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forskriftir fyrir EPC2012

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : EPC2012

framleiðanda : EPC

Lýsing : GANFET TRANS 200V 3A BUMPED DIE

Series : eGaN®

Hluti staða : Discontinued at Digi-Key

FET gerð : N-Channel

Tækni : GaNFET (Gallium Nitride)

Afrennsli að uppspennu (Vdss) : 200V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V

Vgs (th) (Max) @ kt : 2.5V @ 1mA

Hliðargjald (Qg) (Max) @ Vgs : 1.8nC @ 5V

Vgs (hámark) : +6V, -5V

Inntaksrýmd (Ciss) (Max) @ Vds : 145pF @ 100V

FET lögun : -

Dreifing orku (Max) : -

Vinnuhitastig : -40°C ~ 125°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : Die

Pakki / mál : Die

þyngd : -

ástand : Nýtt og frumlegt

Tengt : EP , EPC

skjöl fyrir EPC2012

datasheets : EPC2012.pdf

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