SI2316DS-T1-GE3 - MOSFET N-CH 30V 2.9A SOT23-3

Framleiðanda Part Number

SI2316DS-T1-GE3

Innri Part Number

ABC-SI2316DS-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 30V 2.9A SOT23-3

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

2145682 Pieces

Tilvísun verð

~~USD 0.15255~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

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forskriftir fyrir SI2316DS-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI2316DS-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 30V 2.9A SOT23-3

Series : TrenchFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 2.9A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 3.4A, 10V

Vgs (th) (Max) @ kt : 800mV @ 250µA (Min)

Hliðargjald (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 215pF @ 15V

FET lögun : -

Dreifing orku (Max) : 700mW (Ta)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : SOT-23-3 (TO-236)

Pakki / mál : TO-236-3, SC-59, SOT-23-3

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SI231 , SI2316D

skjöl fyrir SI2316DS-T1-GE3

datasheets : SI2316DS-T1-GE3.pdf

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