FQB6N80TM - MOSFET N-CH 800V 5.8A D2PAK

Framleiðanda Part Number

FQB6N80TM

Innri Part Number

ABC-FQB6N80TM

framleiðanda

ON Semiconductor

Stutt lýsing

MOSFET N-CH 800V 5.8A D2PAK

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

465150 Pieces

Tilvísun verð

~~USD 0.70369~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með FQB6N80TM á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir FQB6N80TM

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FQB6N80TM

framleiðanda : ON Semiconductor

Lýsing : MOSFET N-CH 800V 5.8A D2PAK

Series : QFET®

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 800V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 5.8A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.95 Ohm @ 2.9A, 10V

Vgs (th) (Max) @ kt : 5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (hámark) : ±30V

Inntaksrýmd (Ciss) (Max) @ Vds : 1500pF @ 25V

FET lögun : -

Dreifing orku (Max) : 3.13W (Ta), 158W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : D²PAK (TO-263AB)

Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

þyngd : -

ástand : Nýtt og frumlegt

Tengt : FQB , FQB6

skjöl fyrir FQB6N80TM

datasheets : FQB6N80TM.pdf

Tengdar vörur fyrir FQB6N80TM ON Semiconductor

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