TPN2R805PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Framleiðanda Part Number

TPN2R805PL,L1Q

Innri Part Number

ABC-TPN2R805PL,L1Q

framleiðanda

Toshiba Semiconductor and Storage

Stutt lýsing

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1623629 Pieces

Tilvísun verð

~~USD 0.2016~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með TPN2R805PL,L1Q á lager að selja.

Siglinga valkosti og skipum tími:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

greiðslumöguleikar:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

forskriftir fyrir TPN2R805PL,L1Q

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPN2R805PL,L1Q

framleiðanda : Toshiba Semiconductor and Storage

Lýsing : X35 PB-F POWER MOSFET TRANSISTOR

Series : U-MOSIX-H

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 45V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 139A (Ta), 80A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 40A, 10V

Vgs (th) (Max) @ kt : 2.4V @ 300µA

Hliðargjald (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 3.2nF @ 22.5V

FET lögun : -

Dreifing orku (Max) : 2.67W (Ta), 104W (Tc)

Vinnuhitastig : 175°C

Festingargerð : Surface Mount

Birgir tæki pakki : 8-TSON Advance (3.3x3.3)

Pakki / mál : 8-PowerVDFN

þyngd : -

ástand : Nýtt og frumlegt

Tengt : TPN2 , TPN2R80

skjöl fyrir TPN2R805PL,L1Q

datasheets : TPN2R805PL,L1Q.pdf

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