IRFD123PBF - MOSFET N-CH 100V 1.3A 4-DIP

Framleiðanda Part Number

IRFD123PBF

Innri Part Number

ABC-IRFD123PBF

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 100V 1.3A 4-DIP

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

1062733 Pieces

Tilvísun verð

~~USD 0.308~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með IRFD123PBF á lager að selja.

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forskriftir fyrir IRFD123PBF

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IRFD123PBF

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 100V 1.3A 4-DIP

Series : -

Hluti staða : Active

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 100V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.3A (Ta)

Drifspenna (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 270 mOhm @ 780mA, 10V

Vgs (th) (Max) @ kt : 4V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (hámark) : ±20V

Inntaksrýmd (Ciss) (Max) @ Vds : 360pF @ 25V

FET lögun : -

Dreifing orku (Max) : 1.3W (Ta)

Vinnuhitastig : -55°C ~ 175°C (TJ)

Festingargerð : Through Hole

Birgir tæki pakki : 4-DIP, Hexdip, HVMDIP

Pakki / mál : 4-DIP (0.300", 7.62mm)

þyngd : -

ástand : Nýtt og frumlegt

Tengt : IRF , IRFD1

skjöl fyrir IRFD123PBF

datasheets : IRFD123PBF.pdf

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