SIS414DN-T1-GE3 - MOSFET N-CH 30V 20A 1212-8 PPAK

Framleiðanda Part Number

SIS414DN-T1-GE3

Innri Part Number

ABC-SIS414DN-T1-GE3

framleiðanda

Vishay Siliconix

Stutt lýsing

MOSFET N-CH 30V 20A 1212-8 PPAK

RoHS Staða

Lead frjáls / RoHS samhæft

Sendingartími

1-2 daga

Laus Magn

43104 Pieces

Tilvísun verð

~~USD 0~~

Okkar verð

- (Vinsamlegast hafðu samband við okkur um betri verð: [email protected])

ABC Hálfleiðari með SIS414DN-T1-GE3 á lager að selja.

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forskriftir fyrir SIS414DN-T1-GE3

gæði ábyrgð : 365 dagar ábyrgð

Stock Resource : Franchised dreifingaraðili / Framleiðandi Bein

Upprunaland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIS414DN-T1-GE3

framleiðanda : Vishay Siliconix

Lýsing : MOSFET N-CH 30V 20A 1212-8 PPAK

Series : TrenchFET®

Hluti staða : Obsolete

FET gerð : N-Channel

Tækni : MOSFET (Metal Oxide)

Afrennsli að uppspennu (Vdss) : 30V

Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 20A (Tc)

Drifspenna (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 4.5V

Vgs (th) (Max) @ kt : 1.5V @ 250µA

Hliðargjald (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (hámark) : ±12V

Inntaksrýmd (Ciss) (Max) @ Vds : 795pF @ 15V

FET lögun : -

Dreifing orku (Max) : 3.4W (Ta), 31W (Tc)

Vinnuhitastig : -55°C ~ 150°C (TJ)

Festingargerð : Surface Mount

Birgir tæki pakki : PowerPAK® 1212-8

Pakki / mál : PowerPAK® 1212-8

þyngd : -

ástand : Nýtt og frumlegt

Tengt : SIS41 , SIS414D

skjöl fyrir SIS414DN-T1-GE3

datasheets : SIS414DN-T1-GE3.pdf

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